dated : 20/08/2002 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? MCL4148 silicon epitaxial planar diode features ? saving space ? hermetic sealed parts ? fits onto sod 323 / sot 23 footprints ? electrical data identic al with the device 1n4148 ? micro melf package applications extreme fast switches absolute maximum ratings (t j = 25 o c) parameter test symbol value unit repetitive peak reverse voltage - v rrm 100 v reverse voltage - v r 75 v peak forward surge current t p = 1 s i fsm 2 a repetitive peak forward current - i frm 450 ma forward current - i f 200 ma average forward current v r = 0 i fav 150 ma power dissipation - p tot 500 mw junction temperature - t j 175 o c storage temperature range - t s -65 ? +175 o c maximum thermal resistance (t j = 25 o c) parameter test conditions symbol value unit junction ambient mounted on epoxy-glass hard tissue, 35 m copper clad, 0.9 mm 2 copper area per electrode r thja 500 k/w ls-31
dated : 20/08/2002 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? MCL4148 characteristics at t j = 25 o c parameter test conditions symbol min typ max unit forward voltage i f = 50ma v f - 0.86 1 v v r = 20v i r - - 25 na v r = 20v, t j = 150 o c i r - - 50 a reverse current v r = 75v i r - - 5 a breakdown voltage i r = 100ua, tp/t = 0.01, tp = 0.3ms v (br) 100 - - v diode capacitance v r = 0, f = 1mh z , v hf = 50mv c d - - 4 pf rectification efficiency v hf = 2v, f = 100mh z r 45 - - % i f = i r = 10ma, ir a t rr - - 8 ns reverse recovery time i f = 10ma, v r = 6v, i r = 0.1xl r , r l = 100 t rr - - 4 ns
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